NV-center diamond chip under laboratory conditions
NV-Center Platform

The physics and engineering behind chip-scale quantum sensing

From diamond synthesis to ODMR signal deconvolution: how DeteQt translates nitrogen-vacancy center physics into deployable measurement hardware.

<10 pT
Noise floor
300 K
Operating temp.
3 mm
Chip footprint
Chip Architecture

Diamond chip construction

Each sensor is built on a single-crystal diamond substrate grown by chemical vapour deposition, with NV centers created by nitrogen ion implantation at controlled dose and depth.

CVD diamond substrate

The diamond host is grown by microwave plasma CVD at high purity (nitrogen concentration below 5 ppb before implantation). Substrate orientation is selected to maximise the density of aligned NV centers in the final implanted device.

  • Type IIa CVD diamond, [100] orientation
  • Optical-grade polish for 532/637 nm transmission
  • Nitrogen implantation depth profile: 50-200 nm
  • Post-implant annealing at 900 C for vacancy migration
N+ implantation layer (NV centers) CVD diamond substrate MW stripline + contacts Cross-section schematic (not to scale)
Signal Pipeline

From photon to field vector

Raw fluorescence to calibrated field measurement in four processing stages, executed in firmware and software on the sensor module.

STAGE 01
Photon Detection

Single-photon avalanche diodes collect 637 nm fluorescence during the optical readout window. Integration time is adjusted for the target bandwidth.

STAGE 02
ODMR Acquisition

Microwave frequency is swept across the spin-resonance window. The dip pattern in fluorescence intensity encodes the local magnetic field via the Zeeman effect.

STAGE 03
AI Deconvolution

Our neural signal model separates overlapping resonance lines from NV centers at different orientations, extracting the full field vector from the ensemble spectrum.

STAGE 04
Field Calibration

Temperature-corrected calibration coefficients are applied in-situ. A built-in reference line ensures absolute accuracy across field deployment temperature swings.

Specifications

Current generation sensor specifications

Parameters for the DeteQt Gen-2 sensor module. Values are measured at 300 K unless stated.

Parameter Value Conditions
Magnetic noise floor<10 pT/Hz1 Hz - 1 kHz, 300 K
Measurement bandwidthDC - 1 kHzStandard mode
Dynamic range1 nT - 1 mTAuto-gain
Operating temperature-20 C to +60 CSensor module
Chip footprint3 x 3 mmDiamond substrate
Module volume45 x 35 x 20 mmIncluding optics + MW drive
Power consumption2.8 W (typical)Full operation
InterfaceUSB-C / SPIDigital output
Field axes3-axis vectorFull field vector
Absolute accuracy<1% full-scalePost-calibration